1N6474US/TR parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ Circuit protection~TVS - diode/ 1N6474US/TR

The pictures are for reference only

Brand:

Microchip

Model:

1N6474US/TR

Description:

TVS DIODE 30.5VWM 47.5VC G-MELF

Stock:

95159

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$2.35

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Capacitance at different frequencies

Current peak pulse (10/1000 µ s)

181A(8/20µs)

One-way channel

Power line protection

Power peak pulse

1500W(1.5kW)

Two-way channel

Voltage - breakdown (minimum)

33V

Voltage - reverse off state (typical value)

30.5V

Voltage clamping at different Ipp (maximum)

47.5V

application

currency

packing

series

type

Zener

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

SQ-MELF,G

Country of origin

USA

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

Search1N6474US/TR

1N6474US/TR（Circuit protection~TVS - diode）ByMicrochipDesign and production, ICQQG Electronic component purchase website provides sufficient inventory95159,Price reference "real-time change" China/Hongkong。 1N6474US/TR package/specs, Download 1N6474US/TR、Datasheet。